Infineon IRLHM630TRPBF

INFINEON IRLHM630TRPBF MOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
$ 0.952
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Rochester Electronics
2
IRLHM630TRPBF938.538
13h
Arrow Electronics
2
IRLHM630TRPBF17991
DigiKey
2
IRLHM630TRPBFCT-ND121Cut Tape
RS (Formerly Allied Electronics)IRLHM630TRPBF04KBulk
2h
FarnellIRLHM630TRPBF01
13h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRLHM630TRPBF.

Farnell

Datasheet10 pagine10 anni fa

IHS

ODG (Origin Data Global)

element14 APAC

RS (Formerly Allied Electronics)

Cronologia dell'inventario

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-11-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)

Parti correlate

InfineonIRLHM620TRPBF
Single N-Channel 20 V 3.5 mOhm 52 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
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InfineonIRFHM830DTRPBF
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
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InfineonIRFH5304TRPBF
Single N-Channel 30 V 4.5 mOhm 16 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Dettagli

Descrizioni

Descrizioni di Infineon IRLHM630TRPBF fornite dai suoi distributori.

INFINEON IRLHM630TRPBF MOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
Fly-Wing Technology
30V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS
Infineon SCT
Single N-Channel 20 V 4.5 mOhm 41 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
Future Electronics
Battery Operated DC Motor Inverter MOSFET | MOSFET N-CH 30V 21A PQFN
Win Source
Power MOSFET, N Channel, 30 V, 21 A, 0.0028 ohm, QFN, Surface Mount
Avnet
HEXFET POWER MOSFET Power Field-Effect Transistor, 21A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ComSIT Distribution GmbH
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2800µohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:12V
Farnell
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 12 / Fall Time ns = 43 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 9.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 37
Distrelec

Immagini

element14 APAC
Augswan
element14 APAC
RS (Formerly Allied Electronics)
TME
Distrelec
International Rectifier
Future Electronics

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFIRLHM630TRPBF
  • IRLHM630
  • IRLHM630TRPBF.
  • SP001568974