Infineon IRFH7911TRPBF

Dual N-Channel 30 V 8.6 mOhm 34 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
RS (Formerly Allied Electronics)IRFH7911TRPBF04KBulk
23h
FarnellIRFH7911TRPBF01
9h
Win SourceWS-IRFH7911TRPBF31001
10h
Worldway ElectronicsIRFH7911TRPBF92647Tape & Reel
1d
ICPartonlineIRFH7911TRPBF7071
>1wk

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFH7911TRPBF.

IHS

Datasheet12 pagine12 anni fa
Datasheet11 pagine12 anni fa

element14 APAC

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
InfineonIRFH7911TRPBF
InfineonIRFH7911TR2PBF
Price @ 1000
$ 0.94
Stock
286,719
14,105
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
QFN
-
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
13 A
13 A
Threshold Voltage
-
2.35 V
Rds On Max
8.6 mΩ
8.6 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.4 W
3.4 W
Input Capacitance
1.06 nF
1.06 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-10-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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InfineonIRFH3702TR2PBF
30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package
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InfineonIRFHM9331TRPBF
Single P-Channel 30 V 14.6 mOhm 32 nC HEXFET® Power Mosfet - PQFN 3 x 3 mm
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-30V Single P-Channel HEXFET Power MOSFET in a PQFN 3mm x 3mm package
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onsemiNTL4502NT1
Non-Compliant Surface Mount 6 ns Contains Lead Tape & Reel (TR) 28 ns 11 mΩ QFN
Dettagli

Descrizioni

Descrizioni di Infineon IRFH7911TRPBF fornite dai suoi distributori.

Dual N-Channel 30 V 8.6 mOhm 34 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Future Electronics
30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package, PQFN 5X6 18L, RoHS
Infineon SCT
Trans MOSFET Array Dual N-CH 30V 13A/28A 18-Pin PQFN EP T/R
Avnet
DUAL N CH MOSFET, 30V, PQFN-18; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.2mohm; Rds(on) Test Voltage Vgs:10V ;RoHS Compliant: Yes
Newark
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.9 mm); Dual N-Channel MOSFET; Control and Synchronous MOSFETs in one package; Low Charge Control MOSFET; Low Rdson Synchronous MOSFET; Intrinsic Schottky diode with Low Forward Voltage on Q2
Infineon
MOSFET,NN CH,30V,PQFN56; Module Configuration:Dual; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:18; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:2.4W
element14 APAC

Immagini

element14 APAC
Newark
RS (Formerly Allied Electronics)
International Rectifier

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFH7911
  • SP001577920