Infineon IRFH5220TRPBF
Obsolete
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Rivenditori non autorizzati
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 2.049
Stock
151,118
61,186
Authorized Distributors
0
1
Mount
Surface Mount
Surface Mount
Case/Package
VQFN
VQFN
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
3.8 A
3.8 A
Threshold Voltage
-
-
Rds On Max
99.9 mΩ
99.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.6 W
3.6 W
Input Capacitance
1.38 nF
1.38 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-12-21
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2016-12-02
LTD Date2017-09-02
Parti correlate
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Single N-Channel 200 V 55 mOhm 36 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
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25V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
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MOSFET N-CH 150V 10A 8VQFN / N-Channel 150 V 10A (Ta), 56A (Tc) Surface Mount 8-PQFN (5x6)
Descrizioni
Descrizioni di Infineon IRFH5220TRPBF fornite dai suoi distributori.
200V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm package, PG-TDSON-8, RoHS
Infineon SCT
Trans MOSFET N-CH 200V 3.8A 8-Pin PQFN EP T/R
HEXFET POWER MOSFET Power Field-Effect Transistor, 3.8A I(D), 200V, 0.0999ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N CH MOSFET, 200V, 3.8A, 8-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; No. of Pins:8 ;RoHS Compliant: Yes
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)3.8 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance99.9 mΩ
Drain to Source Voltage (Vdss)200 V
Fall Time3.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.38 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation8.3 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance99.9 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation3.6 W
Rds On Max99.9 mΩ
Rise Time4.7 ns
Turn-Off Delay Time14 ns
Turn-On Delay Time7.2 ns
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità