Infineon IRFH5015TR2PBF
$ 1.931
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFH5015TR2PBF | 0 | 400 | Bulk | 2h | |||||||
| Avnet | IRFH5015TR2PBF | 0 | 400 | 1d | ||||||||
| Farnell | IRFH5015TR2PBF | 0 | 1 | 10h | ||||||||
| Microchip USA | IRFH5015TR2PBF | 299 | 150 | Tray | 1d | |||||||
| Win Source | WS-IRFH5015TR2PBF | 4650 | 22 | 10h |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFH5015TR2PBF.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-01-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
Parti correlate
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Single N-Channel 200 V 55 mOhm 36 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
InfineonIRFH5004TRPBF
40V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
Descrizioni
Descrizioni di Infineon IRFH5015TR2PBF fornite dai suoi distributori.
MOSFET N-CH 150V 10A 8VQFN / N-Channel 150 V 10A (Ta), 56A (Tc) Surface Mount 8-PQFN (5x6)
150V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
MOSFET, N-Channel, 150V, 56A, 31 mOhm, 33 nC Qg, PQFN
Trans MOSFET N-CH 150V 10A 8-Pin PQFN T/R
MOSFET, N CH, 150V, 56A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:150V; On Resistance Rds(on):25.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Power Dissipation Pd:250W; Voltage Vgs Max:20V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance31 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time3.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
Power Dissipation3.6 W
Rds On Max31 mΩ
Recovery Time78 ns
Resistance31 MΩ
Rise Time9.7 ns
Threshold Voltage5 V
Turn-Off Delay Time14 ns
Turn-On Delay Time9.4 ns
Dimensions
Height1.05 mm
Length6.1468 mm
Width5.15 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFH5015TR2PBF.
Conformità
Classificazione ambientale
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità