Infineon IRFF120
$ 17.34
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: Restocked
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFF120.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 17.34
$ 9.335
$ 9.335
Stock
27,092
32,888
32,888
Authorized Distributors
3
3
3
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-39
TO-39
TO-39
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
6 A
6 A
6 A
Threshold Voltage
4 V
-
-
Rds On Max
-
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
20 W
20 W
20 W
Input Capacitance
-
-
-
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
InfineonJANTX2N6788
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Descrizioni
Descrizioni di Infineon IRFF120 fornite dai suoi distributori.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Single N-Channel 100 V 20 W 18 nC Hexfet Power Mosfet Through Hole - TO-39-3
Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
N CHANNEL MOSFET, 100V, 6A TO-205AF; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:20W; Transistor Case Style:TO-39; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:76mJ; Current Id Max:6A; Current Temperature:25°C; External Length / Height:18.03mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Length:14.22mm; No. of Transistors:1; Package / Case:TO-39; Power Dissipation Pd:20W; Power Dissipation Pd:20W; Pulse Current Idm:24A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Weight:0.0024kg
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: Restocked
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Body MaterialMetal
Case/PackageTO-39
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.4 g
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance350 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance300 mΩ
Power Dissipation20 W
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Dimensions
Lead Length14.22 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRFF120.
Conformità
Classificazione ambientale
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCYes
RoHSNon-Compliant
Dichiarazioni di conformità