Infineon 2N6782
$ 17.55
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 17.55
$ 13.703
$ 13.703
Stock
20,389
21,890
21,890
Authorized Distributors
1
2
2
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-39
TO-39
TO-39
Drain to Source Voltage (Vdss)
100 V
-
-
Continuous Drain Current (ID)
3.5 A
3.5 A
3.5 A
Threshold Voltage
4 V
-
-
Rds On Max
-
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
15 W
15 W
15 W
Input Capacitance
-
-
-
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
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Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
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Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
International RectifierJANTX2N6790
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Descrizioni
Descrizioni di Infineon 2N6782 fornite dai suoi distributori.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package, TO-205AF-3
Infineon SCT
Single N-Channel 100 V 0.69 Ohm Through Hole MosFet - TO-39
Trans MOSFET N-CH 100V 3.5A 3-Pin TO-39
3.5 A 100 V 0.6 ohm N-CHANNEL Si POWER MOSFET TO-205AF
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
N CH MOSFET, 100V, 3.5A, TO-205AF; Trans; N CH MOSFET, 100V, 3.5A, TO-205AF; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Body MaterialMetal
Case/PackageTO-39
Contact PlatingLead, Tin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3.5 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation15 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance600 mΩ
Power Dissipation15 W
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time25 ns
Turn-On Delay Time15 ns
Dimensions
Height4.57 mm
Conformità
Classificazione ambientale
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCYes
RoHSNon-Compliant
Dichiarazioni di conformità