Infineon IRF9Z24NSTRLPBF
$ 0.875
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF9Z24NSTRLPBF | 194 | 21h | |||||||||
| RS (Formerly Allied Electronics) | IRF9Z24NSTRLPBF | 0 | 10 | Bulk | 10h | |||||||
| Farnell | IRF9Z24NSTRLPBF | 0 | 1 | 21h | ||||||||
| Weyland Electronics Group Pte. Ltd. | IRF9Z24NSTRLPBF | 6890 | 1 | Tape & Reel | 23h | |||||||
| Win Source | WS-IRF9Z24NS | 13.722 | 40 | 22h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Modelli CAD
Scarica il simbolo Infineon IRF9Z24NSTRLPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | 3D | Scarica |
 Ultra Librarian | SimboloImpronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.875
$ 0.604
Stock
345,241
151,251
Authorized Distributors
3
3
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
DPAK
Drain to Source Voltage (Vdss)
-55 V
-55 V
Continuous Drain Current (ID)
12 A
12 A
Threshold Voltage
4 V
-4 V
Rds On Max
175 mΩ
175 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.8 W
3.8 W
Input Capacitance
350 pF
350 pF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-06-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Parti correlate
onsemiNTB18N06T4
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 15A Tc 15A 48.4W 13ns
InfineonIRF3205SPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;D2Pak;PD 200W;VGS +/-20V
Descrizioni
Descrizioni di Infineon IRF9Z24NSTRLPBF fornite dai suoi distributori.
Single P-Channel 55 V 0.175 Ohm 19 nC HEXFET® Power Mosfet - D2PAK
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) | MOSFET P-CH 55V 12A D2PAK
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET P-CH 55V 12A 3-Pin(2+Tab) D2PAK T/R
MOSFET, P-CHANNEL, -55V, -12A, 175 MOHM, 12.7 NC QG, D2-PAK
MOSFET, P, 55V, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-55V; Current, Id Cont:12A; Resistance, Rds On:0.175ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:TO-262AB; Current, Idm Pulse:48A; Power, Pd:45W; Voltage, Vds Max:55V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)12 A
Current Rating-12 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance175 mΩ
Drain to Source Voltage (Vdss)-55 V
Dual Supply Voltage-55 V
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance175 mΩ
Package Quantity800
PackagingBulk
Power Dissipation3.8 W
Rds On Max175 mΩ
Rise Time55 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time23 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-55 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità