Infineon IRF9953TRPBF

Transistor MOSFET Array Dual P-CH 30V 2.3A 8-Pin SOIC T/R
$ 0.465
Obsolete
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Newark

Datasheet7 pagine21 anni fa

IHS

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-11-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-10-15
LTD Date2023-04-15

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Descrizioni

Descrizioni di Infineon IRF9953TRPBF fornite dai suoi distributori.

Transistor MOSFET Array Dual P-CH 30V 2.3A 8-Pin SOIC T/R
Avnet Japan
Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm) | MOSFET 2P-CH 30V 2.3A 8-SOIC
Dual P-Channel 30 V 0.4 Ohm 12 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH Si 30V 2.3A 8-Pin SOIC T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-2.3A; On Resistance, Rds(on):250mohm; Rds(on) Test Voltage, Vgs:-10V; Leaded Process Compatible:Yes RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = -2.3 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 250 / Gate-Source Voltage V = 20 / Fall Time ns = 6.9 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 9.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2

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  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRF9953
  • IRF9953TRPBF.
  • SP001555962