Infineon IRF9520NPBF

Mosfet, Power; P-ch; Vdss -100V; Rds(on) 0.48 Ohm; Id -6.8A; TO-220AB; Pd 48W; Vgs +/-20
$ 0.92
Obsolete
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Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRF9520NPBF.

IHS

Datasheet10 pagine21 anni fa
Datasheet9 pagine21 anni fa

Newark

RS (Formerly Allied Electronics)

Jameco

iiiC

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-10-30
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-10-15
LTD Date2023-04-15

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Descrizioni

Descrizioni di Infineon IRF9520NPBF fornite dai suoi distributori.

MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.48Ohm;ID -6.8A;TO-220AB;PD 48W;VGS +/-20
INFINEON IRF9520NPBF MOSFET Transistor, P Channel, 6.8 A, -100 V, 480 mohm, -10 V, -4 V
Single P-Channel 100 V 0.48 Ohm 27 nC HEXFET® Power Mosfet - TO-220-3
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, PG-TO220-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):480mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:48W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-6.8A; Current Temperature:25°C; Device Marking:IRF9520N; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:27A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -6.8 / Drain-Source Voltage (Vds) V = -100 / ON Resistance (Rds(on)) mOhm = 480 / Gate-Source Voltage V = 20 / Fall Time ns = 31 / Rise Time ns = 47 / Turn-OFF Delay Time ns = 28 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 48

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • 9520N
  • IRF9520N
  • SP001554524