Infineon IRF7946TRPBF
$ 1.05
NRND
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-04-28
Lifecycle StatusNRND (Last Updated: 1 month ago)
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Descrizioni
Descrizioni di Infineon IRF7946TRPBF fornite dai suoi distributori.
Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
MOSFET N-CH 40V 90A DIRECTFET MX N-Channel 40 V 90A (Tc) 96W (Tc) Surface Mount DIRECTFET™ MX
Single N-Channel 40 V 1.4 mOhm 141 nC HEXFET® Power Mosfet - DirectFET®
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 198 amperes optimized with low on resistance., DIRECTFET, RoHS
Infineon SCT
MOSFET, N-CH, 40V, 198A, DIRECTFET; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:96W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:DirectFET MX; No. of Pins:7; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Specifiche tecniche
Physical
MountSurface Mount
Number of Pins7
Technical
Continuous Drain Current (ID)90 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.1 mΩ
Drain to Source Voltage (Vds)40 V
Fall Time41 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.852 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation96 W
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance1.4 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation96 W
Rds On Max1.4 mΩ
Rise Time49 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time54 ns
Turn-On Delay Time20 ns
Dimensions
Height700 µm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità