Infineon IRF7853PBF
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7853PBF | 0 | 3800 | Bulk | 20h | |||||||
| Farnell | IRF7853PBF | 0 | 1 | Cut Tape | 1d | |||||||
| Win Source | WS-IRF7853PBF | 35.041 | 95 | 4h | ||||||||
| Worldway Electronics | IRF7853PBF | 12.885 | 7 | Tube | 3h | |||||||
| Fly-Wing Technology | IRF7853PBF | 164.068 | 1d |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF7853PBF.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.623
Stock
241,437
1,088,605
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
8.3 A
8.3 A
Threshold Voltage
4.9 V
-
Rds On Max
18 mΩ
18 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
1.64 nF
1.64 nF
Parti correlate
InfineonIRF7493PBF
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 11.5 Milliohms;ID 9.3A;SO-8;PD 2.5W;VGS +/-2
InfineonIRF7495PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;SO-8;PD 2.5W;VGS +/-20
Descrizioni
Descrizioni di Infineon IRF7853PBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14.4 Milliohms;ID 8.3A;SO-8;PD 2.5W;gFS 11S
Single N-Channel 100 V 18 mOhm 28 nC HEXFET® Power Mosfet - SOIC-8
100V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 Package, SO8, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 8.3A 8-Pin SOIC
Power Field-Effect Transistor, 8.3A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N, 100V, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:8.3A; Cont Current Id @ 70°C:6.6; Current Id Max:8.3A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:66A; Rth:50; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)8.3 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.64 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4.9 V
Number of Channels1
Number of Elements1
On-State Resistance18 mΩ
Package Quantity3800
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max18 mΩ
Recovery Time68 ns
Resistance18 MΩ
Rise Time6.6 ns
TerminationSMD/SMT
Threshold Voltage4.9 V
Turn-Off Delay Time26 ns
Turn-On Delay Time13 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF7853PBF.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità