Infineon IRF7759L2TRPBF
$ 5.58
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF7759L2TRPBF | 0 | 21h | |||||||||
| RS (Formerly Allied Electronics) | IRF7759L2TRPBF | 0 | 1 | Bulk | 10h | |||||||
| Arrow Electronics | IRF7759L2TRPBF | 0 | 1 | |||||||||
| Farnell | IRF7759L2TRPBF | 0 | 1 | Cut Tape | 8h | |||||||
| Microchip USA | IRF7759L2TRPBF | 362 | 150 | Tray | 4d |
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Modelli CAD
Scarica il simbolo Infineon IRF7759L2TRPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 SnapEDA | SimboloImpronta | 3D | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 5.58
$ 5.35
Stock
281,290
312,734
Authorized Distributors
4
6
Mount
Surface Mount
Surface Mount
Case/Package
-
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
26 A
26 A
Threshold Voltage
3 V
3 V
Rds On Max
2.3 mΩ
2.3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.3 W
3.3 W
Input Capacitance
12.222 nF
12.222 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-11-16
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2023-05-15
LTD Date2023-11-15
Parti correlate
InfineonAUIRF7759L2TR
Power Field-Effect Transistor, 375A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonIRF7749L2TRPBF
Single N-Channel 60V 1.5 mOhm 300 nC HEXFET® Power Mosfet - DirectFET®
InfineonAUIRFS3006-7TRL
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
Descrizioni
Descrizioni di Infineon IRF7759L2TRPBF fornite dai suoi distributori.
Trans MOSFET N-CH Si 75V 160A 15-Pin Direct-FET L8 T/R / MOSFET N-CH 75V DIRECTFET L8
Single N-Channel 75 V 2.3 mOhm 200 nC HEXFET® Power Mosfet - DirectFET®
A 75V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 26 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
N CH MOSFET, 75V, 26A, DIRECTFET L8; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
MountSurface Mount
Number of Terminals9
Technical
Continuous Drain Current (ID)26 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance2.3 mΩ
Drain to Source Voltage (Vdss)75 V
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance12.222 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.3 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation3.3 W
Rds On Max2.3 mΩ
Rise Time87 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time80 ns
Turn-On Delay Time18 ns
Dimensions
Height780 µm
Length9.144 mm
Width7.112 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità