onsemi FDB024N06
EOL
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | FDB024N06 | 0 | 1 | Cut Tape | 1d | |||||||
| Microchip USA | FDB024N06 | 392 | 150 | 21h | ||||||||
| Win Source | WS-FDB024N06 | 34.000 | 13 | 6h | ||||||||
| Worldway Electronics | FDB024N06 | 15.362 | 7 | Tape & Reel | 4h | |||||||
| IC Components Ltd. | FDB024N06 | 28.800 | 2d |
Modelli CAD
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| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta |
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-06-18
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2024-04-06
LTD Date2024-10-06
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
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Descrizioni
Descrizioni di onsemi FDB024N06 fornite dai suoi distributori.
N-Channel 60 V 2.4 mO Surface Mount PowerTrench Mosfet - D2PAK-3
N-Channel PowerTrench® MOSFET 60V, 265A, 2.4mΩ
Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.762 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time250 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance14.885 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation395 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation395 W
Rds On Max2.4 mΩ
Resistance2.4 MΩ
Rise Time324 ns
Schedule B8541290080
Threshold Voltage3.5 V
Turn-Off Delay Time348 ns
Turn-On Delay Time134 ns
Dimensions
Height5.08 mm
Length10.67 mm
Width9.65 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità