Infineon IRF7401PBF

Transistor MOSFET N Channel 20 Volt 8.7 Amp 8-Pin SOIC

Single N-Channel 20 V 0.022 Ohm 48 nC HEXFET® Power Mosfet - SOIC-8

MOSFET N-CH 20V 8.7A 8SO N-Channel 20 V 8.7A (Ta) 2.5W (Ta) Surface Mount 8-SO

Trans MOSFET N-CH 20V 8.7A 8-Pin SOIC Tube

HEXFET Power MOSFET Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:8.7A; On Resistance, Rds(on):22mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes

N CHANNEL MOSFET, 20V, 8.7A, SOIC; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:8.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8.7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:35A; Row Pitch:6.3mm; SMD Marking:F7401; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:700mV; Voltage Vgs Rds on Measurement:4.5V