Infineon IRF7401PBF
$ 0.76
Obsolete
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Cronologia dell'inventario
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Modelli CAD
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-02-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Parti correlate
VishaySI9926CDY-T1-GE3
Transistor: 2xN-MOSFET; unipolar; 20V; 8A; 0.018ohm; 2W; -55+150 deg.C; SMD; SO8
InfineonIRF7324PBF
MOSFET, Power;Dual P-Ch;VDSS -20V;RDS(ON) 0.018Ohm;ID -9A;SO-8;PD 2W;VGS +/-12V
Descrizioni
Descrizioni di Infineon IRF7401PBF fornite dai suoi distributori.
Transistor MOSFET N Channel 20 Volt 8.7 Amp 8-Pin SOIC
Single N-Channel 20 V 0.022 Ohm 48 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 20V 8.7A 8-Pin SOIC Tube
HEXFET Power MOSFET Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:8.7A; On Resistance, Rds(on):22mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
N CHANNEL MOSFET, 20V, 8.7A, SOIC; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:8.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8.7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:35A; Row Pitch:6.3mm; SMD Marking:F7401; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:700mV; Voltage Vgs Rds on Measurement:4.5V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Nessun dato disponibile
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)8.7 A
Current Rating8.7 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationSingle
Fall Time92 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.6 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs700 mV
Number of Channels1
Number of Elements1
On-State Resistance22 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max22 mΩ
Resistance22 mΩ
Rise Time72 ns
Schedule B8541290080
Threshold Voltage700 mV
Turn-Off Delay Time65 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)20 V
Dimensions
Height1.75 mm
Length4.9784 mm
Row Spacing6.3 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità