Infineon IRF7324PBF
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7324PBF | 0 | 3800 | Bulk | 7h | |||||||
| Farnell | IRF7324PBF | 0 | 1 | 17h | ||||||||
| Win Source | WS-IRF7324PBF | 15.020 | 31 | 18h | ||||||||
| Worldway Electronics | IRF7324PBF | 14.587 | 7 | Tube | 17h | |||||||
| ICPartonline | IRF7324PBF | 37.006 | >1wk |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF7324PBF.
Modelli CAD
Scarica il simbolo Infineon IRF7324PBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
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|---|---|---|---|
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-09-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Parti correlate
onsemiFDS6898AZ-F085
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 10mΩ
VishaySI9926CDY-T1-GE3
Transistor: 2xN-MOSFET; unipolar; 20V; 8A; 0.018ohm; 2W; -55+150 deg.C; SMD; SO8
Descrizioni
Descrizioni di Infineon IRF7324PBF fornite dai suoi distributori.
MOSFET, Power;Dual P-Ch;VDSS -20V;RDS(ON) 0.018Ohm;ID -9A;SO-8;PD 2W;VGS +/-12V
Dual P-Channel 20 V 0.018 Ohm 42 nC HEXFET® Power Mosfet - SOIC-8
HEXFET Power MOSFET(-20V, 0.018ohm) | MOSFET 2P-CH 20V 9A 8-SOIC
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.1 mm); Dual P-Channel MOSFET
Power Field-Effect Transistor, 9A I(D), 20V, 0.018ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-9A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:71A; Row Pitch:6.3mm; SMD Marking:IRF7324PBF; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-4.5V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)9 A
Current Rating-9 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationDual
Fall Time190 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance2.94 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
On-State Resistance18 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2 W
Rds On Max18 mΩ
Recovery Time270 ns
Resistance18 mΩ
Rise Time36 ns
Threshold Voltage-1 V
Turn-Off Delay Time170 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.75 mm
Length5 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF7324PBF.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità