Infineon IRF7380PBF
$ 0.309
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF7380PBF | 25 | 22h | |||||||||
| RS (Formerly Allied Electronics) | IRF7380PBF | 0 | 3800 | Bulk | 12h | |||||||
| Farnell | IRF7380PBF | 0 | 1 | 22h | ||||||||
| Win Source | WS-IRF7380PBF | 108.240 | 165 | 23h | ||||||||
| Worldway Electronics | IRF7380PBF | 16.832 | 7 | Tube | 22h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-08-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Parti correlate
Descrizioni
Descrizioni di Infineon IRF7380PBF fornite dai suoi distributori.
Single N-Channel 80 V 73 mOhm 15 nC HEXFET® Power Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 80V 3.6A 8-Pin SOIC Tube
Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:80V; Continuous Drain Current, Id:3.6A; On Resistance, Rds(on):73mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design; Dual N-Channel MOSFET
DUAL N CHANNEL MOSFET, 80V, SOIC; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:80V; On Resistance Rds(on):73mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.6A; Fall Time tf:17ns; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:1S1,2G1,3S2,4G2,(5&6)D2,(8&7)D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:29A; Rise Time:10ns; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)3.6 A
Current Rating3.6 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance73 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationDual
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance660 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels2
Number of Elements2
On-State Resistance73 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2 W
Rds On Max73 mΩ
Resistance73 MΩ
Rise Time10 ns
Threshold Voltage4 V
Turn-Off Delay Time41 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)80 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità