Infineon IRF6898MTRPBF
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF6898MTRPBF.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-05-27
Lifecycle StatusProduction (Last Updated: 3 months ago)
LTB Date2020-07-15
LTD Date2021-01-15
Parti correlate
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Descrizioni
Descrizioni di Infineon IRF6898MTRPBF fornite dai suoi distributori.
HEXFET Power MOSFET plus Schottky Diode | MOSFET N-CH 25V 35A DIRECTFET
A 25V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 35 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET, N-CH, 25V, 213A, DIRECTFET MX; Transistor Polarity: N Channel; Continuous Drain Current Id: 213A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 800µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance; Integrated Monolithic Sckottky Diode | Target Applications: MultiPhase SyncFET
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
MountSurface Mount
Number of Terminals3
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.1 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time19 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance5.435 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation78 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage25 V
Min Operating Temperature-40 °C
Number of Elements1
On-State Resistance1.1 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation78 W
Rds On Max1.1 mΩ
Rise Time46 ns
Threshold Voltage1.6 V
Turn-Off Delay Time24 ns
Turn-On Delay Time18 ns
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF6898MTRPBF.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità