Infineon IRF6715MTR1PBF
$ 2.7
Obsolete
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Distributori autorizzati
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-06-20
LTD Date2014-12-20
Parti correlate
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Descrizioni
Descrizioni di Infineon IRF6715MTR1PBF fornite dai suoi distributori.
MOSFET, N-Ch, VDSS 25V, RDS(ON) 1.3 mOhm, ID 24A, DirectFET
DIRECTFET POWER MOSFET Power Field-Effect Transistor, 34A I(D), 25V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 34 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET, N, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2.8W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Current Id Max:34A; Package / Case:MX; Power Dissipation Pd:2.8W; Pulse Current Idm:270A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.4V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins7
Number of Terminals3
Technical
Continuous Drain Current (ID)34 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.6 mΩ
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.34 nF
Max Operating Temperature150 °C
Max Power Dissipation78 W
Min Breakdown Voltage25 V
Min Operating Temperature-40 °C
Nominal Vgs1.9 V
Number of Elements1
Power Dissipation2.8 W
Rds On Max1.6 mΩ
Recovery Time42 ns
Rise Time31 ns
TerminationSMD/SMT
Threshold Voltage1.9 V
Turn-Off Delay Time16 ns
Turn-On Delay Time20 ns
Dimensions
Height508 µm
Length5.45 mm
Width5.05 mm
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità