Infineon IRF6725MTR1PBF
$ 2.74
Obsolete
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Distributori autorizzati
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Modelli CAD
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-14
Lifecycle StatusObsolete (Last Updated: 4 weeks ago)
Parti correlate
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Descrizioni
Descrizioni di Infineon IRF6725MTR1PBF fornite dai suoi distributori.
MOSFET, N-Ch, VDSS 30V, RDS(ON) 1.7 mOhm, ID 28A, DirectFET
Trans MOSFET N-CH 30V 28A 7-Pin Direct-FET MX T/R
Power Field-Effect Transistor, 28A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET, N, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:MX; No. of Pins:7; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:28A; Package / Case:MX; Power Dissipation Pd:2.8W; Pulse Current Idm:220A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.35V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins7
Number of Terminals3
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.2 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.7 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
On-State Resistance2.2 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max2.2 mΩ
Recovery Time41 ns
Resistance2.2 MΩ
Rise Time22 ns
TerminationSMD/SMT
Threshold Voltage1.8 V
Turn-Off Delay Time19 ns
Turn-On Delay Time16 ns
Dimensions
Height676 µm
Length6.35 mm
Width5.05 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità