Infineon IRF6668TRPBF
$ 0.921
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF6668TRPBF | 54.312 | 7h | |||||||||
| RS (Formerly Allied Electronics) | IRF6668TRPBF | 0 | 4800 | Bulk | 21h | |||||||
| Farnell | IRF6668TRPBF | 0 | 1 | Cut Tape | 7h | |||||||
| Weyland Electronics Group Pte. Ltd. | IRF6668TRPBF | 14.400 | 1 | Tape & Reel | 2d | |||||||
| Win Source | WS-IRF6668TRPBF | 43.800 | 45 | 8h |
Cronologia dell'inventario
Tendenza a 3 mesi: -1.19%
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Questo componente
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Price @ 1000
$ 0.921
$ 0.921
Stock
916,928
916,928
Authorized Distributors
3
3
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
80 V
80 V
Continuous Drain Current (ID)
55 A
55 A
Threshold Voltage
4 V
4 V
Rds On Max
15 mΩ
15 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.8 W
2.8 W
Input Capacitance
1.32 nF
1.32 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-09-07
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2008-02-27
LTD Date2008-08-01
Parti correlate
InfineonIRFZ44VZSPBF
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
InfineonIRFH5110TRPBF
Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Descrizioni
Descrizioni di Infineon IRF6668TRPBF fornite dai suoi distributori.
Power Field-Effect Transistor, 55A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Single N-Channel 80 V 15 mOhm 31 nC HEXFET® Power Mosfet - DirectFET®
Transistor: N-MOSFET; unipolar; 80V; 55A; 89W; DirectFE
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:80V; Continuous Drain Current, Id:44A; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MZ ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -1.19%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
MountSurface Mount
Number of Terminals3
Technical
Continuous Drain Current (ID)55 A
Current Rating55 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.32 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage80 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance15 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max15 mΩ
Rise Time13 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time7.1 ns
Turn-On Delay Time19 ns
Voltage Rating (DC)80 V
Dimensions
Height700 µm
Length5.45 mm
Width5.05 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità