Infineon IRF9530NSPBF
$ 2.14
Obsolete
Prezzo e stock
Distributori autorizzati
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Rivenditori non autorizzati
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-04-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Parti correlate
InfineonIRL530NSTRLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 17A;D2Pak;PD 79W;VGS +/-20V;Qg 34
InfineonIRL530NSPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 17A;D2Pak;PD 79W;VGS +/-20V;Qg 34
Descrizioni
Descrizioni di Infineon IRF9530NSPBF fornite dai suoi distributori.
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;D2Pak;PD 79W;VGS +/-20V;-55
Single P-Channel 100 V 0.2 Ohm 58 nC HEXFET® Power Mosfet - D2PAK
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: P Power dissipation: 79 W
Trans MOSFET P-CH 100V 14A 3-Pin(2+Tab) D2PAK Tube
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:79W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:-14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:D2-PAK; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:56A; SMD Marking:IRF9530NS; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)14 A
Current Rating-14 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)-100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance760 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Elements1
On-State Resistance200 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max200 mΩ
Recovery Time190 ns
Resistance200 mΩ
Rise Time58 ns
Threshold Voltage-4 V
Turn-Off Delay Time45 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-100 V
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità