Infineon IRF520NSTRLPBF
$ 1.05
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF520NSTRLPBF | 0 | 5 | Bulk | 1d | |||||||
| Farnell | IRF520NSTRLPBF | 0 | 1 | Cut Tape | 1d | |||||||
| Win Source | WS-IRF520NSTRLPBF | 110 | 110 | 9h | ||||||||
| Worldway Electronics | IRF520NSTRLPBF | 15.415 | 7 | Tape & Reel | 8h | |||||||
| Classic Components | IRF520NSTRLPBF | 443 | 23h |
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
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Schede tecniche e documenti
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Modelli CAD
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 1.05
$ 1.13
Stock
188,646
57,720
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
9.7 A
9.7 A
Threshold Voltage
-
4 V
Rds On Max
200 mΩ
200 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.8 W
3.8 W
Input Capacitance
330 pF
330 pF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-12-28
LTD Date2013-06-28
Parti correlate
InfineonIRF520NSPBF
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
InfineonIRL520NSPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;D2Pak;PD 48W;VGS +/-16V;-55d
InfineonIRL520NSTRLPBF
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Descrizioni
Descrizioni di Infineon IRF520NSTRLPBF fornite dai suoi distributori.
Single N-Channel 100 V 0.2 Ohm 25 nC HEXFET® Power Mosfet - D2PAK
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A) | MOSFET N-CH 100V 9.7A D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 9.7A 3-Pin(2+Tab) D2PAK T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:9.7A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)9.7 A
Current Rating9.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance330 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation48 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance200 mΩ
Package Quantity800
PackagingBulk
Power Dissipation3.8 W
Rds On Max200 mΩ
Rise Time23 ns
Schedule B8541290080
Turn-Off Delay Time32 ns
Turn-On Delay Time4.5 ns
Voltage Rating (DC)100 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF520NSTRLPBF.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità