Infineon IRF520NSPBF

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
$ 1.13
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRF520NSPBF.

IHS

Datasheet11 pagine21 anni fa
Datasheet12 pagine21 anni fa

element14 APAC

DigiKey

Newark

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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 1.13
$ 1.05
Stock
57,720
188,646
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
9.7 A
9.7 A
Threshold Voltage
4 V
-
Rds On Max
200 mΩ
200 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.8 W
3.8 W
Input Capacitance
330 pF
330 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Infineon IRF520NSPBF fornite dai suoi distributori.

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 9.7A 3-Pin(2+Tab) D2PAK
HEXFET POWER MOSFET Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:9.7A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
MOSFET, N, 100V, 9.5A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:91mJ; Capacitance Ciss Typ:330pF; Current Iar:5.7A; Current Id Max:9.7A; Current Idss Max:25µA; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.16mm; Fall Time tf:23ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:3.1°C/W; N-channel Gate Charge:25nC; No. of Transistors:1; On State resistance @ Vgs = 10V:200mohm; Package / Case:D2-PAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:38A; Rise Time:23ns

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • 520NSPBF