Infineon IRF3805STRL-7PP
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | IRF3805STRL-7PP | 0 | 1 | Cut Tape | 14h | |||||||
| Microchip USA | IRF3805STRL-7PP | 2275 | 600 | 9h | ||||||||
| Component Stockers USA | IRF3805STRL-7PP | 21.048 | 2d | |||||||||
| Win Source | WS-IRF3805STRL-7PP | 20 | 7 | 16h | ||||||||
| Worldway Electronics | IRF3805STRL-7PP | 18.787 | 7 | Tape & Reel | 15h |
Cronologia dell'inventario
Tendenza a 3 mesi: -14.29%
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Scarica il simbolo Infineon IRF3805STRL-7PP, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
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Questo componente
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Price @ 1000
$ 5.51
Stock
170,536
49,778
Authorized Distributors
1
3
Mount
Surface Mount
Surface Mount
Case/Package
TO-263-7
D2PAK
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
75 A
160 A
Threshold Voltage
-
2 V
Rds On Max
2.6 mΩ
2.6 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
300 W
Input Capacitance
7.82 nF
7.82 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-10-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
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60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
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N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package
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Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Descrizioni
Descrizioni di Infineon IRF3805STRL-7PP fornite dai suoi distributori.
MOSFET N-CH 55V 160A D2PAK / N-Channel 55 V 160A (Tc) 300W (Tc) Surface Mount D2PAK (7-Lead)
55V Single N-Channel HEXFET Power MOSFET in a 7-Lead D2-Pak package, D2PAK7P, RoHS
Infineon SCT
IRF3805S Series 55 V 160 A 300 W SMT HEXFET® Power Mosfet - D2PAK-7
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH Si 55V 240A 7-Pin(6+Tab) D2PAK T/R
Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N CH MOSFET, HEXFET, 55V 160A, D2PAK-7; Transistor Polarity:N Channel; Continuous Drain Current Id:240A; Drain Source Voltage Vds:55V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:7;RoHS Compliant: Yes
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -14.29%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins7
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance2.6 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time52 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.82 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation300 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.6 mΩ
Package Quantity800
PackagingTape & Reel
Power Dissipation300 W
Rds On Max2.6 mΩ
Rise Time130 ns
Schedule B8541290080
Turn-Off Delay Time80 ns
Turn-On Delay Time23 ns
Dimensions
Height5.084 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità