Infineon IRF1010ZPBF
$ 0.928
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: -0.03%
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Questo componente
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Price @ 1000
$ 0.928
$ 1.04
Stock
434,659
107,142
Authorized Distributors
4
3
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
75 A
94 A
Threshold Voltage
-
2 V
Rds On Max
7.5 mΩ
7.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
140 W
140 W
Input Capacitance
2.84 nF
2.84 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-03-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-12-31
LTD Date2024-06-30
Parti correlate
InfineonIRF3205ZPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.9Milliohms;ID 110A;TO-220AB;PD 170W;-55de
InfineonIRF4104PBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 4.3Milliohms;ID 120A;TO-220AB;PD 140W;-55de
Descrizioni
Descrizioni di Infineon IRF1010ZPBF fornite dai suoi distributori.
Single N-Channel 55 V 7.5 mOhm 63 nC HEXFET® Power Mosfet - TO-220-3
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 55V 94A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
MOSFET, N, 55V, 94A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:55V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:1.11°C/W; On State resistance @ Vgs = 10V:7.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -0.03%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time92 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.84 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance7.5 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation140 W
Rds On Max7.5 mΩ
Recovery Time33 ns
Resistance7.5 MΩ
Rise Time150 ns
Turn-Off Delay Time36 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)55 V
Dimensions
Height19.15 mm
Length10.54 mm
Width4.69 mm
Conformità
Classificazione ambientale
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità