Infineon IPD80R1K0CEBTMA1

Trans MOSFET N-CH 800(Min)V 5.7A 3-Pin TO-252 T/R
$ 0.603
Obsolete
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Datasheet15 pagine10 anni fa

Infineon

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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-11-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descrizioni

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Trans MOSFET N-CH 800(Min)V 5.7A 3-Pin TO-252 T/R
Power Field-Effect Transistor, 5.7A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on
800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting

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  • SP001100606