onsemi FCD850N80Z
$ 1.37
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Prezzo e stock
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Cronologia dell'inventario
Tendenza a 3 mesi: -6.97%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FCD850N80Z.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-11-07
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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78W(Tc) 30V 4V@ 250¦ÌA 34nC@ 10 V 1N 620V 900m¦¸@ 3A,10V 6A 578pF@100V TO-252AA 2.38mm
Descrizioni
Descrizioni di onsemi FCD850N80Z fornite dai suoi distributori.
N-Channel Power MOSFET, SUPERFET® II, 800 V, 6 A, 850 mΩ, DPAK
MOSFET N-CH 800V 6A DPAK / isc N-Channel MOSFET Transistor
75W(Tc) 20V 4.5V@ 600¦ÌA 29nC@ 10 V 1N 800V 850m¦¸@ 3A,10V 6A 1.315nF@100V TO-252AA 2.52mm
Power Field-Effect Transistor, 6A I(D), 800V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 800V, 6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.71ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Pow
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -6.97%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance850 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time4.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.315 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation75 W
Rds On Max850 mΩ
Rise Time10 ns
Schedule B8541290080
Turn-Off Delay Time40 ns
Turn-On Delay Time16 ns
Dimensions
Height2.517 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FCD850N80Z.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità