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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Flip Electronics | FDD6630A | 8000 | 5d | |||||||||
| Newark | FDD6630A | 0 | 2500 | Cut Tape | ||||||||
| Farnell | FDD6630A | 0 | 2500 | Custom Reel | 16h | |||||||
| Microchip USA | FDD6630A | 400 | 3K | 6d | ||||||||
| Win Source | WS-FDD6630A | 2500 | 100 | 17h |
Cronologia dell'inventario
Tendenza a 3 mesi: -14.29%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-01-04
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2021-12-24
LTD Date2021-12-24
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
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InfineonIPD040N03LGATMA1
N-Channel 30 V 90 A 4 mOhm Surface Mount OptiMOS Power-Transistor - PG-TO252-3
Descrizioni
Descrizioni di onsemi FDD6630A fornite dai suoi distributori.
N-Channel PowerTrench® MOSFET, 30V, 21A, 35mΩ
N-Channel 30 V 35 mOhm Surface Mount PowerTrench Mosfet TO-252-3
Power Field-Effect Transistor, 21A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
MOSFET, N CH, 30V, 21A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:28W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -14.29%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)21 A
Current Rating21 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance462 pF
Max Operating Temperature175 °C
Max Power Dissipation28 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Elements1
Power Dissipation28 W
Rds On Max35 mΩ
Resistance35 MΩ
Rise Time8 ns
Schedule B8541290080
Turn-Off Delay Time17 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)30 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità