Infineon IPB180N04S4H0ATMA1

Power MOSFET, N Channel, 40 V, 180 A, 1.1 mOhm, TO-263 (D2PAK), 7 Pins, Surface Mount

40V, N-Ch, 1.1 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T2, PG-TO263-7, RoHS

Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101

Mosfet, N-Ch, 40V, 180A, 175Deg C, 250W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon Technologies IPB180N04S4H0ATMA1

Summary of Features: N-channel - Enhancement mode AEC qualifie MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.