Infineon BSC090N03LSGATMA1

Trans Mosfet N-ch 30V 13A 8-PIN Tdson Ep T/r
$ 0.239
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon BSC090N03LSGATMA1.

Newark

Datasheet10 pagine12 anni fa

_legacy Avnet

iiiC

Farnell

Cronologia dell'inventario

Trend di 3 mesi:
-11.57%

Modelli CAD

Scarica il simbolo Infineon BSC090N03LSGATMA1, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.

FONTEeCADmCADFILE
Component Search Engine
SimboloImpronta
3DScarica
EE Concierge
SimboloImpronta
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.

Supply Chain

Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-05
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2026-03-31
LTD Date2026-09-30

Parti correlate

Surface Mount Ceramic Multilayer Capacitor 0.0015uF 5% C0G 50V 0805 Paper T/R
onsemiFDMS7680
FDMS7680 Series 30 V 6.9 mOhm N-Channel PowerTrench Mosfet - POWER-56
Transistor MOSFET N-CH 30V 53A 8-Pin PG-TDSON T/R
onsemiFDS6670AS
N-Channel 30 V 9 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
onsemiFDMS7692A
FDMS7692A Series 30 V 13.5 A 8 mOhm SMT N-Ch PowerTrench Mosfet - Power56
InfineonIRF8714TRPBF
Single N-Channel 30 V 8.7 mOhm 8.1 nC HEXFET® Power Mosfet - SOIC-8

Descrizioni

Descrizioni di Infineon BSC090N03LSGATMA1 fornite dai suoi distributori.

Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:48A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Product Range:- Rohs Compliant: Yes
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)
MOSFET, N CH, 48A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:32W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:48A; Power Dissipation Pd:32W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • BSC090N03LS G
  • BSC090N03LS-G
  • BSC090N03LSG
  • BSC090N03LSGATMA1.
  • SP000275115