onsemi FDS6670AS
$ 0.392
EOL
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Modelli CAD
Scarica il simbolo onsemi FDS6670AS, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 SnapEDA | SimboloImpronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.392
$ 1.046
Stock
9,877,851
217,537
Authorized Distributors
2
2
Mount
Surface Mount
-
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
30 V
-
Continuous Drain Current (ID)
13.5 A
13.5 A
Threshold Voltage
-
-
Rds On Max
9 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
1.54 nF
-
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-03-30
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2021-02-12
LTD Date2021-08-12
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Descrizioni
Descrizioni di onsemi FDS6670AS fornite dai suoi distributori.
N-Channel 30 V 9 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
Trans MOSFET N-CH 30V 13.5A 8-Pin SOIC N T/R
N-Channel PowerTrench® SyncFET™, 30V, 13.5A, 9.0mΩ
MOSFET, N-CH, 30V, 13.5A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V;
The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)13.5 A
Current Rating13.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.54 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation2.5 W
Rds On Max9 mΩ
Resistance9 MΩ
Rise Time5 ns
Turn-Off Delay Time27 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)30 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità