Infineon BSC014N03LSGATMA1
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | BSC014N03LSGATMA1 | 0 | 1 | Cut Tape | 1h | |||||||
| Win Source | WS-BSC014N03LSGATMA1 | 28.010 | 30 | 3h | ||||||||
| Worldway Electronics | BSC014N03LSGATMA1 | 19.374 | 7 | Tape & Reel | 1d | |||||||
| ICPartonline | BSC014N03LS G | 15.229 | >1wk | |||||||||
| IC Components Ltd. | BSC014N03LSGATMA1 | 1.000.100 | 2d |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon BSC014N03LSGATMA1.
Modelli CAD
Scarica il simbolo Infineon BSC014N03LSGATMA1, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta |
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Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-10-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Parti correlate
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-30V Single P-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package, PQFN 5X6 8L, RoHS
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VishaySIR466DP-T1-GE3
Single N-Channel 30 V 3.5 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
VishaySI7114ADN-T1-GE3
SI7114ADN-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 18 A, 30 V, 8-PIN POWERPAK 1212
Descrizioni
Descrizioni di Infineon BSC014N03LSGATMA1 fornite dai suoi distributori.
Trans MOSFET N-CH 30V 34A 8-Pin TDSON EP
Power Field-Effect Transistor, 34A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC014N03 - 12V-300V N-CHANNEL P
BSC014N03LSG INFINEON PG-TDSON-8
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -;
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)34 A
Drain to Source Resistance2.1 mΩ
Drain to Source Voltage (Vdss)30 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.6 nF
Max Dual Supply Voltage30 V
Max Operating Temperature150 °C
Max Power Dissipation139 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance1.4 mΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation139 W
Rise Time8.6 ns
Schedule B8541290080
Turn-Off Delay Time51 ns
Turn-On Delay Time13 ns
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon BSC014N03LSGATMA1.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità