Infineon AUIRLS3036TRL
$ 6.18
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | AUIRLS3036TRL | 0 | 100 | Bulk | 15h | |||||||
| Worldway Electronics | AUIRLS3036TRL | 16.084 | 7 | Tape & Reel | 23h | |||||||
| SHENGYU ELECTRONICS | AUIRLS3036TRL | 14.922 | 1 | 3d | ||||||||
| Fly-Wing Technology | AUIRLS3036TRL | 2194 | 2d | |||||||||
| Vigor Components | AUIRLS3036TRL | 1228 | 1d |
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 6.18
$ 1.639
$ 1.639
Stock
49,493
268,326
268,326
Authorized Distributors
1
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
195 A
195 A
195 A
Threshold Voltage
-
2.5 V
2.5 V
Rds On Max
2.4 mΩ
2.4 mΩ
2.4 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
380 W
380 W
380 W
Input Capacitance
11.21 nF
11.21 nF
11.21 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-08-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-08-15
LTD Date2022-02-15
Parti correlate
STMicroelectronicsSTH260N6F6-2
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package
InfineonIRFS7534PBF
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
STMicroelectronicsSTH265N6F6-2AG
MOSFET N-CH 60V 180A H2PAK-2 / N-Channel 60 V 180A (Tc) 300W (Tc) Surface Mount H2Pak-2
STMicroelectronicsSTH240N75F3-2
N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-2 package
Descrizioni
Descrizioni di Infineon AUIRLS3036TRL fornite dai suoi distributori.
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 60V 270A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Braking
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance11.21 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation380 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance2.4 mΩ
Package Quantity800
PackagingTape & Reel (TR)
Power Dissipation380 W
Rds On Max2.4 mΩ
Rise Time220 ns
Turn-Off Delay Time110 ns
Turn-On Delay Time66 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità