Infineon AUIRFZ44Z
$ 0.18
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.18
$ 0.458
Stock
67,810
408,394
Authorized Distributors
3
4
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220AB
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
51 A
51 A
Threshold Voltage
2 V
4 V
Rds On Max
13.9 mΩ
13.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
80 W
80 W
Input Capacitance
1.42 nF
1.42 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-11-15
LTD Date2021-05-15
Parti correlate
InfineonIRLI3705NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.01Ohm;ID 52A;TO-220 Full-Pak;PD 58W;-55deg
InfineonIRFI1010NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.012Ohm;ID 49A;TO-220 Full-Pak;PD 58W;-55de
STMicroelectronicsSTP55NF06FP
N-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in TO-220FP package
STMicroelectronicsSTP80NF55-06FP
STP80NF55-06FP N-channel MOSFET Transistor, 60 A, 55 V, 3-Pin TO-220FP
Descrizioni
Descrizioni di Infineon AUIRFZ44Z fornite dai suoi distributori.
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 51A Automotive 3-Pin(3+Tab) TO-220AB Tube
MOSFET N-Channel 55V 51A HEXFET TO220AB
Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET,N CH,55V,51A,TO220AB; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:80W; Voltage Vgs Max:20V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)51 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance13.9 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time41 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.42 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation80 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance13.9 mΩ
Package Quantity1000
Power Dissipation80 W
Rds On Max13.9 mΩ
Rise Time68 ns
Threshold Voltage2 V
Turn-Off Delay Time33 ns
Turn-On Delay Time14 ns
Dimensions
Height16.51 mm
Length10.67 mm
Width4.83 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità