Infineon AUIRFZ34N

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
$ 1.043
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Rochester Electronics
2
AUIRFZ34N13.259
13h
RS (Formerly Allied Electronics)AUIRFZ34N05Bulk
6h
FarnellAUIRFZ34N01
13h
VericalAUIRFZ34N6000343
Win SourceWS-AUIRFZ34N67575
14h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon AUIRFZ34N.

IHS

Datasheet11 pagine15 anni fa

element14 APAC

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
InfineonAUIRFZ34N
InfineonIRFZ34NPBF
Price @ 1000
$ 1.043
$ 0.336
Stock
94,221
1,334,774
Authorized Distributors
3
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
29 A
26 A
Threshold Voltage
2 V
4 V
Rds On Max
40 mΩ
40 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
68 W
56 W
Input Capacitance
700 pF
700 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-01-31
LTD Date2021-07-31

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MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.035Ohm;ID 30A;TO-220AB;PD 68W;VGS +/-16V
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MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 29A;TO-220AB;PD 68W;VGS +/-20V
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N-Channel 35 A 55 V 0.034 Ohm UltraFET Power Mosfet - TO-220AB
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Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, TO-220
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Single N-Channel 60 V 0.05 Ohms Flange Mount Power Mosfet - TO-220-3
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onsemiFQP20N06L
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 21 A, 55 mΩ, TO-220
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Descrizioni

Descrizioni di Infineon AUIRFZ34N fornite dai suoi distributori.

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 29A Automotive 3-Pin(3+Tab) TO-220AB Tube
Verical
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET, N CH, 55V, 29A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:68W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
element14 APAC
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
Infineon

Immagini

Infineon
Augswan
TME
RS
element14 APAC
International Rectifier
element14 APAC
LZChips
Rochester Electronics

Alias del produttore

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  • Infineon Technologies
  • INF
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  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFAUIRFZ34N
  • SP001521138