onsemi HUF75321P3
$ 0.627
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Cronologia dell'inventario
Tendenza a 3 mesi: -11.44%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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0 parti disponibili
Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIRFZ34NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 29A;TO-220AB;PD 68W;VGS +/-20V
InfineonIRLZ34NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.035Ohm;ID 30A;TO-220AB;PD 68W;VGS +/-16V
Descrizioni
Descrizioni di onsemi HUF75321P3 fornite dai suoi distributori.
N-Channel 35 A 55 V 0.034 Ohm UltraFET Power Mosfet - TO-220AB
N-Channel UltraFET Power MOSFET 55V, 35A, 34mΩ
Trans MOSFET N-CH 55V 35A 3-Pin (3+Tab) TO-220AB Rail
55V 35A 34m´Î@10V35A 93W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
55 V, 35 A, 34 OHM, N-CHANNEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.034Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: Yes
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -11.44%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)35 A
Current Rating35 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance34 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time66 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance680 pF
Max Operating Temperature175 °C
Max Power Dissipation93 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation93 W
Rds On Max34 mΩ
Resistance34 MΩ
Rise Time55 ns
Schedule B8541290080
Turn-Off Delay Time47 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)55 V
Dimensions
Height16.3 mm
Length10.67 mm
Width4.7 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità