Infineon AUIRFR5305
$ 1.504
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -2.51%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon AUIRFR5305.
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Questo componente
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Price @ 1000
$ 1.504
$ 0.499
$ 0.499
Stock
217,312
4,011,117
4,011,117
Authorized Distributors
4
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
-55 V
-55 V
-55 V
Continuous Drain Current (ID)
31 A
31 A
31 A
Threshold Voltage
-2 V
-4 V
-4 V
Rds On Max
65 mΩ
65 mΩ
65 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
110 W
89 W
89 W
Input Capacitance
1.2 nF
1.2 nF
1.2 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-12-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-09-30
LTD Date2023-03-31
Parti correlate
InfineonIRFR5305PBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W
InfineonIRFR5305TRPBF
Transistor MOSFET P Channel 55 Volt 31 Amp 3-Pin 2+ Tab Dpak Tape and Reel
InfineonIRFR5305TRLPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W
VishaySIS434DN-T1-GE3
Single N-Channel 40 V 0.0076 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8
VishaySQD30N05-20L_GE3
VISHAY SQD30N05-20L -GE3 MOSFET Transistor, N Channel, 30 A, 55 V, 0.016 ohm, 10 V, 2 V
Diodes Inc.DMPH6050SK3Q-13
P-Channel 60 V 50 mOhm Surface Mount Enhancement Mode Mosfet - TO-252
Descrizioni
Descrizioni di Infineon AUIRFR5305 fornite dai suoi distributori.
Automotive Q101 -55V Single P-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
Infineon SCT
Trans MOSFET P-CH 55V 31A Automotive 3-Pin(2+Tab) DPAK Tube
Single P-Channel 55 V 65 mOhm 63 nC Automotive HEXFET® Power Mosfet - DPAK
Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET,W DIODE,P CH,55V,31A,DPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-31A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Voltage Vgs Max:-20V
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -2.51%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)31 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)-55 V
Element ConfigurationSingle
Fall Time63 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance65 mΩ
Package Quantity3000
Power Dissipation110 W
Rds On Max65 mΩ
Resistance65 MΩ
Rise Time66 ns
Schedule B8541290080
Threshold Voltage-2 V
Turn-Off Delay Time39 ns
Turn-On Delay Time14 ns
Dimensions
Height2.52 mm
Length6.73 mm
Width6.22 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon AUIRFR5305.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità