Trans MOSFET N-CH 100V 4.1A 6-Pin Direct-FET SB T/R

N Channel, MOSFET, 100V, 14.4A, DirectFET SB; Transistor Polarity:N Channel; Continuous Drain Current Id:14.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.051ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes

Newark

A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperes with optimized gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio amplifier performance factors su

International Rectifier

MOSFET,N CH,100V,77A,DIRECTFET SB; Transistor Polarity:N Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:77A; Power Dissipation Pd:30W; Voltage Vgs Max:20V

element14 APAC