onsemi FDM3622
$ 1.139
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Cronologia dell'inventario
Tendenza a 3 mesi: -47.75%
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-12-17
Lifecycle StatusProduction (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 days ago)
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Descrizioni
Descrizioni di onsemi FDM3622 fornite dai suoi distributori.
PowerTrench® MOSFET, N-Channel, 100V, 4.4A, 60mΩ
MOSFET, N-Ch, 100V, 4.4A, 60mΩ@4.4A,10V, 1.09nF@25V, MLP-8, SMD, 3.3mm × 3.3mm × 750μm
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
MOSFET, N CH, 100V, 4.4A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.044ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -47.75%
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Specifiche tecniche
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight210 mg
Technical
Continuous Drain Current (ID)4.4 A
Current Rating4.4 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vds)100 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.09 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation900 mW
Rds On Max60 mΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time35 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)100 V
Dimensions
Height800 µm
Length3 mm
Width2 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità