Diodes Inc. ZXT13N50DE6TA
$ 0.363
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | ZXT13N50DE6T-DIO-0 | 0 | 3K | 11h | ||||||||
| RS (Formerly Allied Electronics) | ZXT13N50DE6TA | 0 | 10 | Bulk | 6h | |||||||
| Future Electronics | ZXT13N50DE6TA | 0 | 3K | Tape & Reel | ||||||||
| Avnet | ZXT13N50DE6TA | 0 | 3K | 15h | ||||||||
| Arrow Electronics | ZXT13N50DE6TA | 0 | 3K |
Cronologia dell'inventario
Tendenza a 3 mesi: -34.15%
Modelli CAD
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-01-10
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Descrizioni
Descrizioni di Diodes Inc. ZXT13N50DE6TA fornite dai suoi distributori.
ZXT13N50DE6 Series NPN 4 A 50 V SMT Silicon Low Saturation Transistor - SOT-23-6
Small Signal Bipolar Transistor, 4A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 50V 4A Automotive 6-Pin SOT-23 T/R
50V NPN LOW SATURATION SWITCHING TRANSISTOR VCEO=50V VEBO=7.5V IC=4A
Bipolar Transistors - BJT NPN 50V Low Sat
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: -34.15%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight14.996898 mg
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage145 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current4 A
Current Rating4 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7.5 V
Frequency115 MHz
Gain Bandwidth Product115 MHz
hFE Min10
Max Breakdown Voltage50 V
Max Collector Current4 A
Max Frequency115 MHz
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation1.7 W
Schedule B8541290080
Transition Frequency115 MHz
Voltage Rating (DC)50 V
Dimensions
Height1.3 mm
Length3.1 mm
Width1.8 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità