Diodes Inc. ZVN4306ASTZ
$ 1.12
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | ZVN4306ASTZ | 0 | 1 | 7h | ||||||||
| Future Electronics | ZVN4306ASTZ | 0 | 2K | Ammo | ||||||||
| Avnet | ZVN4306ASTZ | 0 | 2K | 17h | ||||||||
| Microchip USA | ZVN4306ASTZ | 369 | 3K | Tray | 2d | |||||||
| Worldway Electronics | ZVN4306ASTZ | 13.870 | 7 | 3d |
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 1.12
$ 0.8
Stock
14,239
191,085
Authorized Distributors
3
6
Mount
Through Hole
Through Hole
Case/Package
TO-92-3
TO-92-3
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
1.1 A
1.1 A
Threshold Voltage
-
3 V
Rds On Max
330 mΩ
330 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
850 mW
850 mW
Input Capacitance
350 pF
350 pF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Descrizioni
Descrizioni di Diodes Inc. ZVN4306ASTZ fornite dai suoi distributori.
MOSFET N-Channel Enhancement Mode 60V 3-Pin TO-92 Ammo Pack
Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line Ammo
Power Field-Effect Transistor, 1.1A I(D), 60V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
Diodes Inc SCT
60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN E-LINE
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Specifiche tecniche
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Terminals3
Weight453.59237 mg
Technical
Continuous Drain Current (ID)1.1 A
Current Rating1.1 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance330 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation1.13 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Box (TB)
Power Dissipation850 mW
Rds On Max330 mΩ
Rise Time25 ns
Turn-Off Delay Time30 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)60 V
Dimensions
Height4.01 mm
Length4.77 mm
Width2.41 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità