Diodes Inc. ZVN4306A
$ 0.792
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Cronologia dell'inventario
Tendenza a 3 mesi: -1.85%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
onsemi2N7000-D75Z
2N7000 Series 60V 5 Ohms N-Ch Enhancement Mode Field Effect Transistor - TO-92
onsemi2N7000-D74Z
2N7000 Series 60V 5 Ohms N-Ch Enhancement Mode Field Effect Transistor - TO-92
Descrizioni
Descrizioni di Diodes Inc. ZVN4306A fornite dai suoi distributori.
N-Channel 60 V 0.33 Ohm Enhancement Mode Vertical DMOS FET-TO-92
Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line
Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes
Power Field-Effect Transistor, 1.1A I(D), 60V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-Channel 60V 1.1A (Ta) TO-226-3
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
Diodes Inc SCT
DiodesZetex NMOS, Vds=60 V, 1.1 A, E-Line, , 3
MOSFET N-CHANNEL 60V 1.1A E-LINE
MOSFET, N, LOGIC, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:850mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.1A; Current Temperature:25°C; Device Marking:ZVN4306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:850mW; Power Dissipation Pd:850mW; Power Dissipation Ptot Max:850mW; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: -1.85%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight453.59237 mg
Technical
Continuous Drain Current (ID)1.1 A
Current Rating1.1 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance330 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation850 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation850 mW
Rds On Max330 mΩ
Resistance330 mΩ
Rise Time25 ns
Threshold Voltage3 V
Turn-Off Delay Time30 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)60 V
Dimensions
Height4.01 mm
Length4.77 mm
Width2.41 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità