Diodes Inc. FZT651TA
$ 0.212
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Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -85.63%
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Price @ 1000
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Stock
2,712,362
738,517
738,517
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-223
SOT-223
SOT-223
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
60 V
60 V
60 V
Max Collector Current
3 A
3 A
3 A
Transition Frequency
175 MHz
175 MHz
175 MHz
Collector Emitter Saturation Voltage
600 mV
600 mV
600 mV
hFE Min
40
40
40
Power Dissipation
2 W
2 W
2 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1992-02-01
Lifecycle StatusProduction (Last Updated: 5 months ago)
Descrizioni
Descrizioni di Diodes Inc. FZT651TA fornite dai suoi distributori.
Bipolar (BJT) Single Transistor, NPN, 60 V, 3 A, 2 W, SOT-223, Surface Mount
FZT651 Series 3 A 60 V NPN Bipolar (BJT) Transistor SMT - SOT-223
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
60V 2W 100@500mA,2V 3A NPN SOT-223 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 60V 3A 4-Pin (3+Tab) SOT-223 T/R
General Purpose Transistors NPN Ic=3A Vceo=60V hfe=100~300 P=3W SOT223
SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
Bipolar Transistors - BJT NPN Medium Power
TRANSISTOR, NPN, REEL 1K; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:60V; Typ Gain Bandwidth ft:175MHz; Power Dissipation Pd:2W; DC Collector Current:3A; DC Current Gain hFE:200; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; Case Style:SOT-223; Current Ic hFE:0.5A; Full Power Rating Temperature:25°C; Max Current Ic:3A; Max Current Ic Continuous a:3A; Max Power Dissipation Ptot:2W; Max Voltage Vce Sat:0.3V; Min Gain Bandwidth ft:140MHz; Min Hfe:100; No. of Transistors:1; Power Dissipation:2W; Pulsed Current Icm:6A; Reel Quantity:1000; SMD Marking:FZT651; Tape Width:12mm; Termination Type:SMD; Transistor Type:Bipolar; Voltage Vcbo:80V
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: -85.63%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Terminals4
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)60 V
Continuous Collector Current3 A
Current3 A
Current Rating3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency175 MHz
Gain Bandwidth Product175 MHz
hFE Min40
Max Breakdown Voltage60 V
Max Collector Current3 A
Max Frequency175 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation2 W
Schedule B8541290080
TerminationSMD/SMT
Transition Frequency175 MHz
Voltage60 V
Voltage Rating (DC)60 V
Dimensions
Height1.8 mm
Length6.7 mm
Width3.7 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità