Diodes Inc. BSS123TA

BSS123 Series 100 V 6 Ohm N-Channel Enhancement Mode Vertical DMOS FET- SOT-23
$ 0.134
Production
Pagina del produttoreScheda dati

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DistributorSKUMinPkg
DigiKey
3
BSS123CT-ND12.8741Cut Tape
AvnetBSS123TA60003K
9h
Newark
3
BSS123TA135Cut Tape
Arrow ElectronicsBSS123TA30003K
VericalBSS123TA30003K

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Diodes Inc. BSS123TA.

Diodes Inc SCT

Technical Drawing5 pagine9 anni fa

IHS

Future Electronics

Newark

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
Diodes Inc.BSS123TA
onsemiBSS123LT1G
onsemiBSS123LT1G
Price @ 1000
$ 0.134
$ 0.075
$ 0.075
Stock
1,357,948
79,272,086
79,272,086
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
170 mA
170 mA
170 mA
Threshold Voltage
1.4 V
800 mV
800 mV
Rds On Max
6 Ω
6 Ω
6 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
360 mW
225 mW
225 mW
Input Capacitance
20 pF
20 pF
20 pF

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1992-02-01
Lifecycle StatusProduction (Last Updated: 4 months ago)

Parti correlate

onsemiBSS123LT1G
Transistor: N-MOSFET; unipolar; 100V; 0.17A; 6ohm; 225mW; -55+150 deg.C; SMD; SOT23; AEC-Q100
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Diodes Inc.BSS123-7-F
N-Channel 100 V 6 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3
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InfineonBSS123NH6327XTSA1
Power MOSFET, N Channel, 100 V, 190 mA, 6 Ohm, SOT-23, 3 Pins, Surface Mount
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onsemiBSS123
Transistor MOSFET Negative Channel 100 Volt 0.17A 3-Pin SOT-23
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InfineonBSS119NH6327XTSA1
Power MOSFET, N Channel, 100 V, 190 mA, 2.406 ohm, SOT-23, Surface Mount
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InfineonBSS169H6327XTSA1
Power MOSFET, N Channel, 100 V, 170 mA, 2.9 Ohm, SOT-23, 3 Pins, Surface Mount
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Descrizioni

Descrizioni di Diodes Inc. BSS123TA fornite dai suoi distributori.

BSS123 Series 100 V 6 Ohm N-Channel Enhancement Mode Vertical DMOS FET- SOT-23
Future Electronics
Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R
Verical
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ComSIT Distribution GmbH
MOSFET,N CH,100V,0.17A,SOT23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:170mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170mA; Power Dissipation Pd:300mW; Voltage Vgs Max:20V
element14 APAC

Immagini

RS APAC
RS (Formerly Allied Electronics)
element14
TME
TME
element14
Farnell
Onlinecomponents.com
Future Electronics

Alias del produttore

Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:

  • Diodes Incorporated
  • DIODE
  • DII
  • DIO
  • DIODE INC
  • DC COMPONENTS
  • DIOD
  • YENYO
  • Diodes Zetex
  • MICRO COM
  • MICRO ELECTRONIC INS
  • Diodes Inc / Zetex
  • DIODE INCORPORATED
  • DIODES ZET
  • DIODSE
  • DINC
  • Diodes Inc Inc
  • DIOINC
  • FORMOSA MS
  • DIODES INC(RoHS)
  • ZETEX (DIODES INC)
  • DIODES INC/VISHAY
  • Diodes Incorporation
  • ZETEXDIODES
  • DIODES INC/VISH
  • Pericom
  • Diodes Incorporated