Diodes Inc. BSS123-7-F
$ 0.058
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | BSS123-7-F | 93.000 | 3K | 19h | ||||||||
| Newark | BSS123-7-F | 332 | 1 | Cut Tape | ||||||||
| Arrow Electronics | BSS123-7-F | 27 | 27 | |||||||||
| Verical | BSS123-7-F | 24.000 | 3K | |||||||||
| Future Electronics | BSS123-7-F | 2.268.000 | 3K | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: +11.15%
Modelli CAD
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Price @ 1000
$ 0.058
$ 0.097
$ 0.097
Stock
57,777,839
47,933,177
47,933,177
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
170 mA
170 mA
170 mA
Threshold Voltage
1.4 V
1.7 V
1.7 V
Rds On Max
6 Ω
6 Ω
6 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
300 mW
360 mW
360 mW
Input Capacitance
60 pF
73 pF
73 pF
Supply Chain
Country of OriginMainland China, Taiwan
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-11-11
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
onsemiBSS123LT1G
Transistor: N-MOSFET; unipolar; 100V; 0.17A; 6ohm; 225mW; -55+150 deg.C; SMD; SOT23; AEC-Q100
Diodes Inc.BSS138-7-F
N-Channel 50 V 3.5 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3
InfineonBSS123NH6327XTSA1
Power MOSFET, N Channel, 100 V, 190 mA, 6 Ohm, SOT-23, 3 Pins, Surface Mount
Descrizioni
Descrizioni di Diodes Inc. BSS123-7-F fornite dai suoi distributori.
N-Channel 100 V 6 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3
Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 0.2 W
Mosfet, N Channel, 100V, 170Ma, Sot-23; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:170Ma; Tensión Drenaje-Fuente Vds:100V; Resistencia De Activación Rds(On):6Ohm; Tensión Vgs De Medición Rds(On):10V |Diodes Inc. BSS123-7-F
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: +11.15%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Continuous Drain Current (ID)170 mA
Current15 A
Current Rating170 mA
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance6 Ω
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance60 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs1.4 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation300 mW
Rds On Max6 Ω
Resistance6 Ω
Rise Time8 ns
Schedule B8541210080
Threshold Voltage1.4 V
Turn-Off Delay Time13 ns
Turn-On Delay Time8 ns
Voltage100 V
Voltage Rating (DC)100 V
Dimensions
Height1.1 mm
Length2.9 mm
Width1.3 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità