Diodes Inc. BSR33TA
$ 0.149
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: +21.60%
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Questo componente
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Price @ 1000
$ 0.149
$ 0.094
$ 0.094
Stock
540,023
1,628,911
1,628,911
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-89
SOT-89
SOT-89
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
80 V
80 V
80 V
Max Collector Current
1 A
1 A
1 A
Transition Frequency
100 MHz
150 MHz
150 MHz
Collector Emitter Saturation Voltage
500 mV
500 mV
500 mV
hFE Min
50
25
25
Power Dissipation
1 W
1 W
1 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
ROHM2SB1260T100Q
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
ROHM2SB1260T100R
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Descrizioni
Descrizioni di Diodes Inc. BSR33TA fornite dai suoi distributori.
BSR33 Series PNP 80 V 1 A 1 W Power Transistor - SOT-89
80 V PNP MEDIUM POWER TRANSISTOR IN SOT89 Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 80V 1A 4-Pin (3+Tab) SOT-89 T/R
TRANSISTOR, PNP, 80V, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:250mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:500mA; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:50; Package / Case:SOT-89; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Pulsed Current Icm:2A; Termination Type:SMD; Voltage Vcbo:90V
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: +21.60%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-89
Contact PlatingTin
MountSurface Mount
Number of Terminals3
Weight51.993025 mg
Technical
Collector Base Voltage (VCBO)90 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Continuous Collector Current-1 A
Current Rating-1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min50
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityPNP
Power Dissipation1 W
Schedule B8541290080
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage Rating (DC)-80 V
Dimensions
Height1.5 mm
Length4.5 mm
Width2.5 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità