Diodes Inc. BCX5316TA
$ 0.08
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Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
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Questo componente
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Price @ 1000
$ 0.08
$ 0.216
$ 0.216
Stock
853,808
3,406,657
3,406,657
Authorized Distributors
6
4
4
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-89
SOT
SOT
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
-80 V
80 V
80 V
Max Collector Current
1 A
1 A
1 A
Transition Frequency
150 MHz
145 MHz
145 MHz
Collector Emitter Saturation Voltage
500 mV
-500 mV
-500 mV
hFE Min
100
100
100
Power Dissipation
1 W
1.35 W
1.35 W
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ROHM2SB1260T100Q
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Descrizioni
Descrizioni di Diodes Inc. BCX5316TA fornite dai suoi distributori.
Bipolar (BJT) Single Transistor, PNP, 80 V, 500 mA, 1 W, SOT-89, Surface Mount
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 80V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R / TRANS PNP 80V 1A SOT-89
BCX5316 Series 1 A 80 V SMT PNP Silicon Planar Medium Power Transistor - SOT-89
General Purpose Transistors PNP Ic=1A Vceo=80V hfe=40~250 P=2W SOT89
Bipolar Transistors - BJT PNP Medium Power
TRANSISTOR, PNP, 80V, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:150mA; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:100; Package / Case:SOT-89; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Pulsed Current Icm:1.5A; Termination Type:SMD; Voltage Vcbo:100V
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-89
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight51.993025 mg
Technical
Collector Base Voltage (VCBO)-100 V
Collector Emitter Breakdown Voltage-80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Continuous Collector Current-1 A
Current Rating-1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency150 MHz
Gain Bandwidth Product150 MHz
hFE Min100
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Frequency150 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityPNP
Power Dissipation1 W
Schedule B8541290080
TerminationSMD/SMT
Transition Frequency150 MHz
Voltage Rating (DC)-80 V
Dimensions
Height1.6 mm
Length4.5 mm
Width2.5 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità