Diodes Inc. BC847BS-7-F
$ 0.058
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Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: +111%
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Questo componente
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Price @ 1000
$ 0.058
$ 0.052
$ 0.052
Stock
3,754,249
36,446,095
36,446,095
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-363
SOT-363
SOT-363
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
45 V
45 V
45 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
100 mV
-
-
hFE Min
200
200
200
Power Dissipation
200 mW
350 mW
350 mW
Parti correlate
Diodes Inc.BC847PN-7-F
BC847PN Series NPN/PNP 45 V 200 mW Small Signal Transistor Surface Mount-SOT-363
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ON SEMI SBC847CDW1T1G DUAL NPN BIPOLAR TRANSISTOR, 0.1 A, 45 V, 6-PIN SOT-363
Diodes Inc.DDC114YU-7-F
DDC114YU Series NPN/PNP 50 V 100 mA Dual Transistor Surface Mount - SOT-363-6
Diodes Inc.DCX123JU-7-F
Bipolar Pre-Biased / Digital Transistor, NPN and PNP Complement, 50 V, 50 V, 100 mA, 2.2 kohm
ToshibaRN4983,LF(CT
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Descrizioni
Descrizioni di Diodes Inc. BC847BS-7-F fornite dai suoi distributori.
Transistor: NPN; bipolar; 45V; 0.1A; 210mW; -55+150 deg.C; SMD; SOT363
BC847BS Series Dual NPN 45 V 200 mW Small Signal Transistor SMT - SOT-363
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon
Bipolar Transistor Array, Dual, Dual NPN, 45 V, 100 mA, 200 mW
45V 200mW 200@2mA,5V 100mA 2 NPN SOT-323-6 Bipolar Transistors - BJT ROHS
General Purpose Transistors Dual NPN Ic=100mA Vceo=45V hfe=200~450 P=200mW SOT363
Bipolar Transistors - BJT NPN BIPOLAR
TRANSISTOR, NPN/NPN, SOT363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:400mV; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:200; Package / Case:SOT-363; Power Dissipation Pd:200mW; Termination Type:SMD; Transistor Type:Small Signal
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: +111%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-363
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight6.010099 mg
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage100 mV
Collector Emitter Voltage (VCEO)45 V
Current1 A
Element ConfigurationDual
Emitter Base Voltage (VEBO)6 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min200
Max Breakdown Voltage60 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements2
PackagingCut Tape
PolarityNPN
Power Dissipation200 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage45 V
Dimensions
Height1.1 mm
Length2.2 mm
Width1.35 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità