onsemi SBC847CDW1T1G

on Semi SBC847CDW1T1G Dual NPN Bipolar Transistor, 0.1 A, 45 V, 6-PIN SOT-363
$ 0.055
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Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi SBC847CDW1T1G.

Master Electronics

Datasheet11 pagine9 anni fa
Datasheet13 pagine1 anno fa

IHS

Future Electronics

RS (Formerly Allied Electronics)

Cronologia dell'inventario

Trend di 3 mesi:
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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-02-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Parti correlate

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Diodes Inc.DCX114EU-7-F
Bipolar Pre-Biased / Digital Transistor, NPN and PNP Complement, 50 V, 50 V, 100 mA, 10 kohm
Trans Digital BJT NPN 50V 100mA 200mW 6-Pin US T/R

Descrizioni

Descrizioni di onsemi SBC847CDW1T1G fornite dai suoi distributori.

ON SEMI SBC847CDW1T1G DUAL NPN BIPOLAR TRANSISTOR, 0.1 A, 45 V, 6-PIN SOT-363
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon
100 mA, 45 V Dual NPN Bipolar Junction Transistors
45V 380mW 420@2mA,5V 100mA 2 NPN SOT-323-6 Bipolar Transistors - BJT ROHS
BC847CDW1 Series 45 V 100 mA Dual General Purpose Transistor - SOT-363
Trans GP BJT NPN 45V 0.1A 380mW Automotive 6-Pin SC-88 T/R
600mV@ 5mA,100mA 2 NPN (Dual) 380mW 6V 15nA 50V 45V 100mA SOT-363-6 1mm
TRANSISTOR ARRAY, AEC-Q101, NPN, SOT-363; Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 45V; Power Dissipation Pd: 380mW; DC Collector Current: 100mA; DC Current Gain hFE: 420hFE; Transistor Case Style: SO

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