Renesas HIP2103FRTAAZ

60V, 1A/2A Peak, 1/2 Bridge Driver with 4V UVLO | IC DRVR HALF BRIDGE 60V 8-DFN
$ 1.339
Production
Page du fabricantFiche technique

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Téléchargez les fiches techniques et la documentation du fabricant pour Renesas HIP2103FRTAAZ.

IHS

Datasheet31 pagesIl y a 7 ans
Datasheet21 pagesIl y a 15 ans

Integrated Device Technology

Renesas

Newark

Modèles CAO

Informations sur le modèle
Fournisseur :Renesas
Date de publicationAug 13, 2025
Conforme à la norme IPCIPC-7351B
Révision du guide de styleVersion 1.0 - Nov 1, 2024
Source de la fiche techniqueVersion 2.0 - Feb 25, 2021
Vérification

Historique des stocks

Tendance sur 3 mois:
+0.00%

Pièces de rechange

Ce composant
Pièces de rechange
Price @ 1000
$ 1.339
$ 1.555
Stock
290,327
667,976
Authorized Distributors
6
3
Case/Package
DFN
DFN
Number of Pins
8
8
Channel Type
Independent
Independent
Number of Drivers
2
2
Max Output Current
1 A
1 A
Rise Time
21 ns
21 ns
Fall Time
17 ns
17 ns
Min Supply Voltage
4.5 V
4.5 V
Max Supply Voltage
14 V
14 V
Max Power Dissipation
550 mW
550 mW

Chaîne d'approvisionnement

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8540000000
Introduction Date2013-11-27
Lifecycle StatusProduction (Last Updated: 2 months ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)

Descriptions

Descriptions de Renesas HIP2103FRTAAZ fournies par ses distributeurs.

60V, 1A/2A Peak, 1/2 Bridge Driver with 4V UVLO | IC DRVR HALF BRIDGE 60V 8-DFN
Half Bridge MOSFET 1A 4.5V~14V 1A DFN-8-EP(3x3) Gate Drive ICs ROHS
Half Bridge Driver, 3 Phase Dc Brushless, Tdfn8
RoHS Compliant Matte Tin (Sn) - annealed e3 Surface Mount IC Gate Driver 50.008559mg 60V 2.3W 200mA
8ns 2 4.5V 30ns(Typ) 14V 1.63V,2.06V Non-Inverted-Phase MOSFET,N 2ns 1A,1A TDFN-8(EP) 3mm*3mm*750¦Ìm
MOTOR DRIVER, TDFN-8, -40 TO 125DEG C;
Half Bridge Based MOSFET Driver
IC GATE DRVR HALF-BRIDGE 8TDFN
The HIP2103 is a half-bridge driver designed for applications using DC motors, 3-phase brushless DC motors, or other similar loads. The two inputs (HI and LI) independently control the high-side driver (HO) and the low-side driver (LO). HI and LI can be configured to enable/disable the device, which lowers the number of connections to a microcontroller and the cost. The low IDD bias current in the Sleep mode prevents battery drain when the device is not in use, which eliminates the need for an external switch to disconnect the driver from the battery. Integrated pull-down resistors on all of the inputs (LI, HI, VDen, and VCen) reduce the need for external resistors. An active-low resistance pull-down on the LO output ensures that the low-side bridge FET remains off during the Sleep mode or when VDD is below the Undervoltage Lockout (UVLO) threshold.

Alias du fabricant

Renesas possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Renesas peut également être connu sous les noms suivants :

  • Renesas Electronics
  • Renesas Electronics America Inc
  • Renesas Electronics America
  • RENESA
  • REN
  • RENES
  • RENESAS TECHNOLOGY CORP
  • RENESAS TECHNOLOGY
  • Renesas Electronics Corporation
  • RENESAS ELECTRONICS CORP
  • RENSAS
  • RENASAS
  • Renesas / Intersil
  • RNS
  • RENESAS-PB
  • RENESASTEC
  • RENESES
  • Renesas Technology America
  • Renesas Design Germany GmbH
  • Renesas / IDT
  • RENESASE
  • RENESAS TECHNOLOGY HONG KONG
  • Renesas Electronics Operations Services Limited
  • RENEASAS
  • RENESAS/M